Current field effect transistors
Dr. C. Antonio Cerdeira Altuzarra
Profesor-Investigador de Electrónica del Estado Sólido
Centro de Investigación y de Estudios Avanzados del IPN
Mexico
: 21 de March de 2024
: 10:00 am
: Palace of Conventions – Room 7
Abstract:
The technological development of devices, integrated circuits and applications of field effect transistors (FETs) from their emergence to the present day will be presented, through two main aspects. First, those based on monocrystalline silicon such as FinFETs, Nanowires, Nanosheets, Forksheet Transistors and CFETs; and second, those based on low-cost transistors such as oxide semiconductor TFTs (AOSTFTs) and two-dimensional semiconductor transistors (2D FETs).
